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| TPCS8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8105 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications * * * * * Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 9.6 m (typ.) High forward transfer admittance: |Yfs| = 23 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating -30 -30 20 -10 -40 1.1 0.6 26 -10 0.11 150 -55 to 150 Unit V V V A 1,2,3 Source 4 Gate 5,6,7,8 Drain Pulse (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range JEDEC W W mJ A mJ C C 2-3R1F JEITA TOSHIBA Weight: 0.035 g (typ.) Circuit Configuration 8 7 6 5 Note 1, Note 2, Note 3 and Note 4: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2 3 4 1 2004-07-06 TPCS8105 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 114 208 Unit C/W C/W Marking (Note 5) Part No. (or abbreviation code) S8105 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (unit: mm) FR-4 25.4 x 25.4 x 0.8 (unit: mm) (a) (b) Note 3: VDD = -24 V, Tch = 25C (initial), L = 0.2 mH, RG = 25 , IAR = -10 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: on lower right of the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture (01 for the first week of year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) 2 2004-07-06 TPCS8105 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 0V VGS -10 V 4.7 ID = -5 A VOUT RL = 3 VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -30 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 20 V VDS = -10 V, ID = -1 mA VGS = -4 V, ID = -5 A VGS = -10 V, ID = -5 A VDS = -10 V, ID = -5 A Min -30 -15 -0.8 11 VDD -24 V, VGS = 10 V, - ID = -10 A Typ. 13.5 9.6 23 5710 560 590 18 23 109 396 107 12 20 Max 10 -10 -2.0 19.5 13.5 ns nC pF Unit A A V V m S VDD -15 V - Duty < 1%, tw = 10 s = Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = -10 A, VGS = 0 V Min Typ. Max -40 1.2 Unit A V 3 2004-07-06 TPCS8105 ID - VDS -10 -10 -5 -2.5 -2.4 Common source Ta = 25C Pulse test -2.3 -2.2 -20 -10 -5 -3 ID - VDS -2.6 -2.5 Common source Ta = 25C Pulse test -2.4 -12 -2.3 -8 -2.2 -4 -2.1 Drain current ID (A) -6 -4 -2.1 -2 VGS = -2 V Drain current ID (A) -8 -3 -2.6 -16 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 0 VGS = -2 V -0.4 -0.8 -1.2 -1.6 -2.0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -20 Common source VDS = -10 V Pulse test -0.5 VDS - VGS Common source Ta = 25C Pulse test (V) VDS -0.4 Drain current ID (A) -16 100 -8 25 -4 Ta = -55C Drain-source voltage -12 -0.3 -0.2 -0.1 -2.5 ID = -11 A -5.5 0 0 -1 -2 -3 -4 -5 0 0 -4 -8 -12 -16 -20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 Common source VDS = -10 V Pulse test 100 Ta = -55C 100 10 RDS (ON) - ID Common source Ta = 25C Pulse test Forward transfer admittance |Yfs| (S) 25 Drain-source ON resistance RDS (ON) (m) VGS = -4 V 10 -10 1 0.1 -0.1 -1 -10 -100 1 -1 -10 -100 Drain current ID (A) Drain current ID (A) 4 2004-07-06 TPCS8105 RDS (ON) - Ta 20 Common source Pulse test 16 -5 12 VGS = -4 V ID = -11 A -2.5 -5 ID = -11 A -2.5 -100 IDR - VDS (A) Drain-source ON resistance RDS (ON) (m) -10 -10 -5 -3 -1 8 Drain reverse current IDR -1 VGS = 0 V 4 VGS = -10 V 0 -80 -40 0 40 80 120 160 -0.1 0 Common source Ta = 25C Pulse test 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 -2.5 Vth - Ta Common source VDS = -10 V -2.0 ID = -1 mA Pulse test 1000 Coss Crss Gate threshold voltage Vth (V) Ciss (pF) -1.5 Capacitance C -1.0 100 Common source VGS = 0 V f = 1 MHz Ta = 25C 10 -0.1 -1 -10 -100 -0.5 0 -80 -40 0 40 80 120 160 Ambient temperature Ta (C) Drain-source voltage VDS (V) PD - Ta 2.0 Dynamic input/output characteristics -30 -12 (W) Drain power dissipation PD t = 10 s 1.2 (2) 0.8 -12 -20 VDS -12 -15 -6 -10 VGS Common source ID = -11 A Ta = 25C Pulse test -5 -2 -4 VDD = -24 V -6 -8 0.4 0 0 25 50 75 100 125 150 175 0 0 20 40 60 80 100 120 0 140 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2004-07-06 Gate-source voltage VGS 1.6 (2) Device mounted on a glass-epoxy board (b) (Note 2b) (V) -25 VDD = -24 V -10 -6 Drain-source voltage VDS (V) (1) (1) Device mounted on a glass-epoxy board (a) (Note 2a) TPCS8105 rth - tw 1000 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) 100 (4) Single-device value at dual operation (Note 3b) t = 10 s rth (C/W) (2) (1) Transient thermal impedance 10 1 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area 100 ID max (Pulse)* 1 ms* Drain current ID (A) 10 10 ms* 1 0.1 0.01 0.01 * Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.1 1 VDSS max 10 100 Drain-source voltage VDS (V) 6 2004-07-06 TPCS8105 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2004-07-06 |
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